document number: 88886 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-aug-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 glass passivated junction rectifier gpp60a thru gpp60g vishay general semiconductor features ? glass passivated chip junction ? low forward voltage drop ? low leakage current, typical i r less than 0.2 a ? high forward surge capability ? meets environmental standard mil-s-19500 ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in general purpose rect ification of power supplies, inverters, converters and freewheeling diodes application. mechanical data case: p600, molded epoxy over passivated junction molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 cla ss 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 6.0 a v rrm 50 v to 400 v i fsm 500 a v f 1.1 v i r 5.0 a t j max. 175 c p600 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gpp60a gpp60b gpp60d gpp60g unit maximum repetitive pe ak reverse voltage v rrm 50 100 200 400 v maximum rms voltage v rms 35 70 140 280 v maximum dc blocking voltage v dc 50 100 200 400 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t a = 55 c i f(av) 6.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 500 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88886 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-aug-09 gpp60a thru gpp60g vishay general semiconductor note (1) thermal resistance from junction to ambient and from juncti on to lead at 0.375" (9.5 mm) lead length, p.c.b. mounted note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbo l gpp60a gpp60b gpp60d gpp60g unit maximum instantaneous forward voltage 6.0 a v f 1.1 v maximum reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a t a = 100 c 100 maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 5.5 s typical junction capacitance 4.0 v, 1 mhz c j 110 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gpp60a gpp60b gpp60d gpp60g unit typical thermal resistance r ja (1) 20 c/w r jl (1) 4.0 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode gpp60j-e3/54 2.0 54 800 13" diam eter paper tape and reel gpp60j-e3/73 2.0 73 300 am mo pack packaging gpp60jhe3/54 (1) 2.0 54 800 13" diameter paper tape and reel gpp60jhe3/73 (1) 2.0 73 300 ammo pack packaging 0 2 4 6 8 25 50 75 100 125 150 175 ambient temperature (c) average forwar d current (a) 0 50 100 150 200 250 300 350 400 450 500 550 1 10 100 number of cycle s at 60 hz average forwar d current (a)
document number: 88886 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-aug-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 gpp60a thru gpp60g vishay general semiconductor fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance package outline dimensions in inches (millimeters) 10 100 1 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) t j = 150 c t j = 25 c t j = 100 c t j = 175 c 50 100 100 10 10 0.01 20 30 40 60 70 80 90 0.1 1 1000 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) t j = 150 c t j = 25 c t j = 100 c t j = 175 c 10 1 100 10 100 1000 0.1 rever s e voltage (v) junction capacitance (pf) 0.052 (1.32) 0.048 (1.22) 0.360 (9.1) 0.340 (8.6) dia. 1.0 (25.4) min. 0.360 (9.1) 0.340 (8.6) 1.0 (25.4) min. p600
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